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2D Material/III-Nitride Heterostructures

2D Material/III-Nitride Heterostructures Fundamentals, Fabrication, and Applications

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2D Material/III-Nitride Heterostructures

Fundamentals, Fabrication, and Applications

Wenliang Wang

Technology & Engineering / Materials Science / Electronic Materials

This book focuses on III-nitride semiconductors (e.g., GaN, AlN), the cornerstone of modern optoelectronics and power electronics. Despite their transformative impact, these materials face inherent limitations.
A pioneering solution lies in integrating them with two-dimensional (2D) materials like graphene. These hybrid heterostructures offer critical advantages:
· Enhanced Compatibility: 2D materials alleviate lattice mismatch and improve thermal management.
· Tailored Properties: They enable precise control over electronic and optical characteristics.
· New Functionality: The synergy unlocks novel applications in flexible and neuromorphic computing devices.
Consolidating a decade of global research and groundbreaking work from our group, this book addresses key challenges and serves as an essential resource for professionals, researchers, and students in materials science and microelectronics.

Wenliang Wang received his bachelor’s (2011) and Ph.D. (2016) degrees in materials science from Fuzhou University and South China University of Technology, respectively. From 2016 to 2021, he worked in turn at South China University of Technology, and the Hong Kong University of Science and Technology, respectively. He is currently a full professor in State Key Laboratory of Luminescent Materials and Devices, South China University of Technology.

His research interests focus on the two-dimensional material/group-III nitride hetero-structures and devices, including photo-detectors, light-emitting diodes, photocatalyst, optoelectronic neuromorphic devices, etc. He has contributed to more than 100 first/corresponding author SCI papers including Nature Communications, Advanced Materials, Advanced Functional Materials, IEEE Electron Device Letters, etc. He has selected into the National-Level Young Talent (2023), Guangdong Natural Science Funds for Distinguished Young Scholar (2020), Young Elite Scientists Sponsorship Program by CAST (2019), Xiaomi Young Talents Program (2026), etc. He has hosted more than 20 projects and granted more 30 invention patents, including American patent, Singapore patent, Australia patent, Japan patent and Chinese patent. He has got the First-Class Award of China Nonferrous Metals Industry Science and Technology Award (the 1st awardee, 2024), Guangdong Youth Science and Technology Innovation Award (2024), Outstanding Engineer Youth Award of China Nonferrous Metals Society (2021), and the First-Class Award of Guangdong Province Technology Invention Award (the 2nd awardee, 2019), etc.


Publication Date: 20 August 2026
Publisher: Springer Nature Singapore
Imprint: Springer
ISBN-13: 9789819224999
Format: Hardback

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