Computational Microelectronics

Sverdlov, Viktor

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Details

Published by: Springer

Publication Date: 2016-08-23

Format: Paperback

ISBN-13: 9783709119334

DOI: 10.1007/978-3-7091-0382-1

Dimensions: 240cm x168cm

Pages: 252