{"product_id":"9783662496817","title":"Springer Theses","description":"\u003ch1\u003eSpringer Theses\u003c\/h1\u003e \u003ch2\u003eLi, Zhiqiang\u003c\/h2\u003e \u003cp\u003eThis book mainly focuses on reducing the high parasitic resistance in the source\/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe\/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal\/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source\/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source\/drain engineering technique for high-performance CMOS devices at future technology node.\u003c\/p\u003e \u003ch3\u003eDetails\u003c\/h3\u003e \u003cp\u003ePublished by: Springer\u003c\/p\u003e \u003cp\u003ePublication Date: 2016-06-22\u003c\/p\u003e \u003cp\u003eFormat: Hardcover\u003c\/p\u003e \u003cp\u003eISBN-13: 9783662496817\u003c\/p\u003e \u003cp\u003eDOI: 10.1007\/978-3-662-49683-1\u003c\/p\u003e \u003cp\u003eDimensions: 235cm x155cm\u003c\/p\u003e \u003cp\u003ePages: 59\u003c\/p\u003e ","brand":"Springer Berlin Heidelberg","offers":[{"title":"Default Title","offer_id":45582716797068,"sku":"9783662496817","price":49.49,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/9545\/1788\/files\/9783662496817.jpg?v=1776462163","url":"https:\/\/fh90cf-fv.myshopify.com\/products\/9783662496817","provider":"Late Knight Books and Services, LLC","version":"1.0","type":"link"}