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Gas Source Molecular Beam Epitaxy

Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures

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Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures

Panish, Morton B.; Temkin, Henryk

Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.

Details

Published by: Springer

Publication Date: 2011-12-30

Format: Paperback

ISBN-13: 9783642781292

DOI: 10.1007/978-3-642-78127-8

Dimensions: 235cm x155cm

Pages: 428

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