Engineering Materials: Mobile Ions Effects on the Oxide Properties

Bentarzi, Hamid

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Details

Published by: Springer

Publication Date: 2011-01-16

Format: Hardcover

ISBN-13: 9783642163036

DOI: 10.1007/978-3-642-16304-3

Dimensions: 235cm x155cm

Pages: 106