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Ferroelectric Random Access Memories

Ferroelectric Random Access Memories Fundamentals and Applications

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Topics in Applied Physics

Ferroelectric Random Access Memories

Fundamentals and Applications

Hiroshi Ishiwara | Masanori Okuyama | Yoshihiro Arimoto

Technology & Engineering / Materials Science / Metals & Alloys

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.


Publication Date: 16 April 2004
Publisher: Springer Berlin Heidelberg
Imprint: Springer
ISBN-13: 9783540407188
Format: Hardback
Page Count: 291

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