Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series

Ammerlaan, C.A.J.; Schulz, Max; Bergholz, W.; Clerjaud, B.; Ennen, H.; Grimmeiss, H.G.; Hamilton, B.; Kaufmann, U.; Münch, W.v.; Murray, R.; Newman, R.C.; Peaker, A.R.; Pensl, G.; Rath, H.-J.; Sauer, R.; Schneider, J.; Schulz, M.; Skolnick, M.S.; Stolwijk, N.A.; Vogl, P.; Willoughby, A.F.W.; Zulehner, W.

Subvolume III/22b of the Landolt-Börnstein New Series presents a comprehensive data compilation on defects and impurities in the elemental semiconductors and in the III-V compounds. Data on semiconductor defects were already included in the extended data collection on semiconductors in volumes III/17a...i. Research on semiconductor defects and impurities, however, advanced so rapidly during recent years that a new subvolume on this important topic seemed desirable. The information given in subvolume III/22b ranges from trends on defect properties as predicted by theory and a survey of diagnostic techniques to extensive tables and graphical representations of defect properties. The editor and the authors have endeavoured to find a unified form and to critically select the important and reliable information from the wide range of published data. Discussions of ambiguous results or textbook style explanations are avoided.

Details

Published by: Springer

Publication Date: 1989-12-12

Format: Hardcover

ISBN-13: 9783540179177

DOI:

Dimensions: 270cm x193cm

Pages: 776