{"product_id":"9783527353187","title":"HfO2-Based Ferroelectric Materials Fabrication, Characterization and Device Applications","description":"\u003ch1\u003eHfO2-Based Ferroelectric Materials\u003c\/h1\u003e\u003ch2\u003eFabrication, Characterization and Device Applications\u003c\/h2\u003e\u003ch3\u003eXubing Lu\u003c\/h3\u003e\u003cdiv\u003e\u003cb\u003eTechnology \u0026amp; Engineering \/ Materials Science \/ Electronic Materials\u003c\/b\u003e\u003c\/div\u003e\u003cbr\u003e\u003cdiv\u003e\n\u003cp\u003e\u003cb\u003eExplores HfO\u003csub\u003e2\u003c\/sub\u003e-based ferroelectrics for memory, sensing, and advanced electronic applications\u003c\/b\u003e \u003c\/p\u003e\n\u003cp\u003eFerroelectric hafnium oxide (HfO\u003csub\u003e2\u003c\/sub\u003e)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO\u003csub\u003e2\u003c\/sub\u003e has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short. \u003c\/p\u003e\n\u003cp\u003eWith contributions from leading experts, \u003ci\u003eHfO\u003csub\u003e2\u003c\/sub\u003e-Based Ferroelectric Materials\u003c\/i\u003e addresses the critical need for a consolidated reference on HfO\u003csub\u003e2\u003c\/sub\u003e-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO\u003csub\u003e2\u003c\/sub\u003e-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges—such as the wake-up effect, fatigue, and imprint issues—and the strategies developed to mitigate them. \u003c\/p\u003e\n\u003cp\u003eAn authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, \u003ci\u003eHfO\u003csub\u003e2\u003c\/sub\u003e-Based Ferroelectric Materials:\u003c\/i\u003e \u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eExplains the origins of ferroelectricity in doped HfO\u003csub\u003e2\u003c\/sub\u003e and its unique material advantages\u003c\/li\u003e \u003cli\u003eDetails deposition techniques and approaches to regulating ferroelectric behavior\u003c\/li\u003e \u003cli\u003eExamines device-level challenges, including wake-up effect, fatigue, and imprint reliability\u003c\/li\u003e \u003cli\u003eHighlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices\u003c\/li\u003e \u003cli\u003eDiscusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories\u003c\/li\u003e \u003cli\u003eProvides insight into the reliability of HfO\u003csub\u003e2\u003c\/sub\u003e-based thin films, capacitors, and field-effect transistors\u003c\/li\u003e\n\u003c\/ul\u003e \u003cp\u003e\u003ci\u003eHfO\u003csub\u003e2\u003c\/sub\u003e-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications\u003c\/i\u003e is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.\u003c\/p\u003e\n\u003c\/div\u003e\u003cdiv\u003e  \u003cp\u003e\u003ci\u003e\u003cb\u003eXubing Lu\u003c\/b\u003e is Professor of Physics at South China Normal University, where his research focuses on dielectric and ferroelectric thin-film materials and their applications in non-volatile memory devices. He earned his PhD in Physics from Nanjing University, China in 2002 and subsequently held research positions as a postdoctoral researcher, JSPS research fellow, and Humboldt fellow across leading institutions in China and abroad. Professor Lu has published over 250 scientific papers and holds more than 20 Chinese patents.\u003c\/i\u003e \u003c\/p\u003e\n\u003c\/div\u003e\u003cbr\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003ctd\u003ePublication Date: \u003c\/td\u003e\n\u003ctd\u003e10 August 2026\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePublisher: \u003c\/td\u003e\n\u003ctd\u003eWiley\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eImprint: \u003c\/td\u003e\n\u003ctd\u003eWiley-VCH\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eISBN-13: \u003c\/td\u003e\n\u003ctd\u003e9783527353187\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFormat: \u003c\/td\u003e\n\u003ctd\u003eHardback\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePage Count: \u003c\/td\u003e\n\u003ctd\u003e480\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e","brand":"Wiley","offers":[{"title":"Default Title","offer_id":45414518849676,"sku":"9783527353187","price":185.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/9545\/1788\/files\/9783527353187.jpg?v=1780617924","url":"https:\/\/fh90cf-fv.myshopify.com\/products\/9783527353187","provider":"Late Knight Books and Services, LLC","version":"1.0","type":"link"}