Multi-run Memory Tests for Pattern Sensitive Faults

Mrozek, Ireneusz

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

• Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  
• Presents practical algorithms for design and implementation of efficient multi-run tests;
  
• Demonstrates methods verified by analytical and experimental investigations.
  

Details

Published by: Springer

Publication Date: 2018-07-18

Format: Hardcover

ISBN-13: 9783319912035

DOI: 10.1007/978-3-319-91204-2

Dimensions: 235cm x155cm

Pages: 135