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This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
Published by: Springer
Publication Date: 2018-05-24
Format: Hardcover
ISBN-13: 9783319779935
DOI: 10.1007/978-3-319-77994-2
Dimensions: 235cm x155cm
Pages: 232