SpringerBriefs in Materials

Ouyang, Jianyong

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Details

Published by: Springer

Publication Date: 2016-07-11

Format: Paperback

ISBN-13: 9783319315706

DOI: 10.1007/978-3-319-31572-0

Dimensions: 235cm x155cm

Pages: 93