Fundamentals of Nanoscaled Field Effect Transistors

Chaudhry, Amit

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Details

Published by: Springer

Publication Date: 2016-08-23

Format: Paperback

ISBN-13: 9781493944828

DOI: 10.1007/978-1-4614-6822-6

Dimensions: 235cm x155cm

Pages: 201