{"product_id":"9781119562238","title":"Magnetic Memory Technology Spin-transfer-Torque MRAM and Beyond","description":"\u003ch1\u003eMagnetic Memory Technology\u003c\/h1\u003e\u003ch2\u003eSpin-transfer-Torque MRAM and Beyond\u003c\/h2\u003e\u003ch3\u003eDenny D. Tang | Chi-Feng Pai\u003c\/h3\u003e\u003cdiv\u003e\u003cb\u003eScience \/ Physics \/ Magnetism\u003c\/b\u003e\u003c\/div\u003e\u003cbr\u003e\u003cdiv\u003e\n\u003cp\u003e\u003cb\u003eSTAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003ci\u003eMagnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond\u003c\/i\u003e delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications.\u003c\/p\u003e \u003cp\u003eThis book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization.\u003c\/p\u003e \u003cp\u003eAmong other topics, readers will benefit from the book's discussions of:\u003c\/p\u003e \u003cul\u003e \u003cli\u003eAn introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts\u003c\/li\u003e \u003cli\u003eAn thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization\u003c\/li\u003e \u003cli\u003eA comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model\u003c\/li\u003e \u003cli\u003eSpin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect\u003c\/li\u003e \u003cli\u003eDifferent categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003ePerfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, \u003ci\u003eMagnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond\u003c\/i\u003e also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.\u003c\/p\u003e\n\u003c\/div\u003e\u003cdiv\u003e  \u003cp\u003e\u003cb\u003eDENNY D. TANG, P\u003csmall\u003eH\u003c\/small\u003eD,\u003c\/b\u003e has been with IBM Watson and later Almaden Research Center, TSMC, and held a position as MRAM Architect in Western Digital. He Is a Live Fellow of IEEE, Fellow of TSMC Academy, a co-author of Magnetic Memory, Fundamentals and Technology, (2010). \u003c\/p\u003e\n\u003cp\u003e\u003cb\u003eCHI-FENG PAI, P\u003csmall\u003eH\u003c\/small\u003eD,\u003c\/b\u003e is now an Associate Professor of National Taiwan University (NTU). He is the recipient of Young Researcher Award of Asian Union of Magnetic Society (AUMS), Young Researcher Fellowship of Ministry of Science and Technology (MOST, Taiwan), and Young Researcher Award of Taiwan Semiconductor Industry Association (TSIA). \u003c\/p\u003e\n\u003c\/div\u003e\u003cbr\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003ctd\u003ePublication Date: \u003c\/td\u003e\n\u003ctd\u003e07 January 2021\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePublisher: \u003c\/td\u003e\n\u003ctd\u003eWiley\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eImprint: \u003c\/td\u003e\n\u003ctd\u003eWiley-IEEE Press\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eISBN-13: \u003c\/td\u003e\n\u003ctd\u003e9781119562238\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFormat: \u003c\/td\u003e\n\u003ctd\u003eHardback\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePage Count: \u003c\/td\u003e\n\u003ctd\u003e352\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWeight (oz): \u003c\/td\u003e\n\u003ctd\u003e16.0\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e","brand":"Wiley","offers":[{"title":"Default Title","offer_id":44378675445900,"sku":"9781119562238","price":134.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/9545\/1788\/files\/9781119562238.jpg?v=1780145815","url":"https:\/\/fh90cf-fv.myshopify.com\/products\/9781119562238","provider":"Late Knight Books and Services, LLC","version":"1.0","type":"link"}