{"product_id":"9780387243146","title":"The Springer International Series in Engineering and Computer Science","description":"\u003ch1\u003eThe Springer International Series in Engineering and Computer Science\u003c\/h1\u003e \u003ch2\u003eCroon, Jeroen A.; Sansen, Willy M; Maes, Herman E.\u003c\/h2\u003e \u003cp\u003e\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eMatching Properties of Deep Sub-Micron MOS Transistors\u003c\/strong\u003e examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:\u003c\/p\u003e\n\u003cp\u003eA simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D\/A converter.\u003c\/p\u003e\n\u003cp\u003eThe most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. \u003c\/p\u003e\n\u003cp\u003eThe physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1\/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. \u003c\/p\u003e\n\u003cp\u003eThe impact of process parameters on the matching properties is discussed. \u003c\/p\u003e\n\u003cp\u003eThe impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. \u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eMatching Properties of Deep Sub-Micron MOS Transistors\u003c\/strong\u003e is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.\u003c\/p\u003e \u003ch3\u003eDetails\u003c\/h3\u003e \u003cp\u003ePublished by: Springer\u003c\/p\u003e \u003cp\u003ePublication Date: 2005-03-24\u003c\/p\u003e \u003cp\u003eFormat: Hardcover\u003c\/p\u003e \u003cp\u003eISBN-13: 9780387243146\u003c\/p\u003e \u003cp\u003eDOI: 10.1007\/b105122\u003c\/p\u003e \u003cp\u003eDimensions: 232cm x156cm\u003c\/p\u003e \u003cp\u003ePages: 206\u003c\/p\u003e ","brand":"Springer US","offers":[{"title":"Default Title","offer_id":45578380476556,"sku":"9780387243146","price":152.99,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0710\/9545\/1788\/files\/9780387243146.jpg?v=1779503106","url":"https:\/\/fh90cf-fv.myshopify.com\/products\/9780387243146","provider":"Late Knight Books and Services, LLC","version":"1.0","type":"link"}